The 1200V IGBT devices unveiled at PCIM this week are based on gate precision field stopping (FS) technology, which provides a more uniform electrical field within the chip, supports higher breakdown voltages and provides improved dynamic control. By providing the best compromise between conduction and switching losses, as well as improved EMI design, these devices maximize the efficiency of various medium and high frequency switching power conversion designs.
CEO Markus Mosen told eeNews Europe that these are IGBT and third-generation modules, and the company is developing a 1400V version.
The 1200V IGBT devices are rated at 650V/75A, 1200V/40A and 1200V/75A and are available in TO247 or TO247-4L packages depending on the device selected. All devices operate at a maximum junction temperature (Tj) of 175°C and are tested at this maximum H3TRB (High Humidity, High Temperature and High Reverse Bias) voltage and 100% HTRB (High Temperature Reverse Bias) bias.
Target applications include solar inverters, motor control systems, uninterruptible power supplies (UPS) and welding. Positive temperature coefficient simplifies parallel operation in applications requiring higher performance, while die, discrete and modular product options provide flexibility for a variety of target designs.
Post time: Jul-04-2024