Mitsubishi Electric has begun to provide industrial equipment with NX packaging full SIC power semiconductor module sample

Mitsubishi Electric Group recently announced that it will be provided on June 14th to provide samples with NX packaged all -in SIC power semiconductor modules for industrial equipment on June 14. This module reduces the internal inductance and integrates the second -generation SIC chip, which is expected to help achieve more efficient, smaller, and lighter industrial equipment.

In order to reduce carbon emissions within the global society, power semiconductor devices are increasingly used for high -efficiency power transformation occasions. Among them, the expectations of SIC power semiconductors that can significantly reduce power loss are getting higher and higher. High -power, high -efficiency power semiconductor can improve the power conversion efficiency of industrial equipment (inverters and other components), and its demand is continuously expanding.

Mitsubishi Electric began to launch a power semiconductor module equipped with SIC chip in 2010. This time, the new module adopts a low -loss SIC chip and an optimized internal structure. Compared with the existing Si IGBT module, the internal mixed inductor decreases by about 47%*1, and the power loss is significantly reduced.

The development of this SIC product has been part of the support of Japan’s New Energy · Industry Technology Comprehensive Development Agency (NEDO).

 Features

The optimized internal structure and adopt SIC chip help to achieve the efficient, miniaturized, and lightweight of the device

The internal connection adopts the optimized layer structure, which realizes the internal mixed inductance of 9NH, which is about 47%lower than the existing IGBT module;

By reducing the internal bruises, suppressing the surge voltage of the equipment, reducing the switching loss while reducing the high -speed switch;

The second -generation SIC chip with JFET doped technology*2 has low loss characteristics. Compared with the existing Si IGBT module, power loss is reduced by about 72%*1, which helps improve equipment efficiency;Low power loss helps reduce the production of calories, thereby allowing smaller and lighter to light heat sinks. Compatible NX packaging, SI module and SIC module can be easily replaced

While carrying SIC chips, the compatibility of NX -type packaging is maintained in terms of shape size and foot configuration, which is convenient for easy replacement and help shorten the design time of the new device.

Future development

Mitsubishi Electric will continue to expand its power semiconductor module product line, and further contribute to the efficient, miniaturized, and lightweight of industrial equipment.

*1：基于三菱电机确定的测量条件，与1700V/600A NX-type Si IGBT Module T-series (CM600DX-34T)对比得出

*2：JFET (Junction Field Effect Transistor)：结型场效应晶体管

*3：RoHS: Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment