Infineon XHP 3 IGBT modules are designed for applications in Layer 2 and 3 topologies from 2000 to 3300 VAC

       Infineon XHP 3 IGBT modules are designed for applications in Layer 2 and 3 topologies from 2000 to 3300 VAC, such as large conveyors, pumps, high-speed trains, locomotives, and commercial, construction and agricultural vehicles (CAVs).
       The XHP series includes dual 450 A IGBT modules with TRENCHSTOP IGBT4 and emitter driven diodes, as well as dual 450 A diode modules with E4 emitter driven diodes.
        Both modules feature improved 10.4 kV isolation and help simplify parallel designs with convenient parallel connections. Thus, only one direct bus is required for parallel connection, allowing smaller motor drives to be realized without sacrificing efficiency. Previously, parallel switching of modules required complex busbars, resulting in increased design complexity and higher leakage inductance, which increased losses and reduced overall driver efficiency.
       The 4.5kV XHP series also allows designers to reduce the number of devices because the design can be reduced to two double switches and a smaller double diode, rather than multiple single switches and a double diode.
        The combination of the XHP 3 FF450R45T3E4_B5 dual switch and the DD450S45T3E4_B5 dual diode provides significant cost savings and reduced footprint. For example, Infineon’s previous IGBT solution required four 140 x 190 mm² or 140 x 130 mm² switches and one 140 x 130 mm² dual diode. In the new XHP series, the components can be reduced to two 140 x 100 mm² double switches and a smaller 140 x 100 mm² double diode.