The Japanese manufacturer said its latest power semiconductor modules are based on compact insulated gate bipolar transistors (IGBTs) and are designed for high-power industrial power converters at 2300 V.
Japan’s Fuji Electric has launched a new high-power module in its next-generation core series based on the latest insulated gate bipolar transistor (IGBT) platform with fly-back diode (FWD).
The new 1700V, 3300V class HPnC X-Series modules will be available in June and are designed for high-power power converters from 1700V to 3.3kV DC.
The module dimensions are 100 x 144 x 40 mm and are designed for current from 1200 to 1800 A, depending on the model. This series of IGBT products is available in 1700V or 2300V voltage options.
The company noted that it uses the latest generation of IGBT ICs with internal pin layout, materials and layout optimized for high heat dissipation, allowing for higher current density per unit area and achieving 1800A current rating in a small package.
Fuji Electric saw an opportunity to convert solar photovoltaic systems to 1500 V (DC) battery voltage and use grid balancing elements.
“The 2300V breakdown voltage product supports 1500VDC, which helps reduce the number of power converter components,” the manufacturer said, noting that the new product can achieve lower power conversion by reducing the number of other components, such as wiring in the peripheral circuit . The area occupied by the device.
Fuji Electric already has a model customer for its X-series HPnC IGBT modules in the renewable energy industry, namely Danish wind turbine manufacturer Vestas.
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Post time: Jun-05-2024