The compact three-phase module design combines all six trench IGBTs into one housing and features an integrated temperature sensor.
Trench semiconductor technology guarantees particularly low switching losses, high short-circuit protection and excellent performance characteristics. Available in 750V/660A (model GD660HTA75P7H) and 1200V/260A (model GD260HTA120P7H).
The three-phase bridge topology provides a compact inverter design for main and auxiliary drive applications. Each IGBT has a built-in freewheeling diode.
The package is optimized for low inductance. The GD660HTA75P7H uses PINFIN technology’s electrically insulating all-copper substrate and high-strength silicon nitride (Si3N4) ceramic material for optimal cooling. The high-voltage model GD260HTA120P7H adopts DBC (Direct Cladding Copper) technology substrate and also uses PINFIN structure for cooling.
Post time: Aug-13-2024